Abstracts and Available Papers Presented at the 2005 International RERTR Meeting
Out-of-Pile
Diffusion Studies Between U-7wt%Mo and Al-Si Alloys
M. Mirandou, S. Aricó,
L. Gribaudo and S. Balart
Departamento Materiales, CAC, CNEA
Avda. Gral Paz 1499, B1650KNA, San Martin. Argentina
ABSTRACT
New diffusion experiments were performed at 340ºC
between U-Mo and Al6061 and Al A 356 alloys. Better
concentration measurements and XRD identification of
crystal structures were possible. Experiments to study
eventual changes of the interaction-layer due to the
consumption of Si while diffusion is taking place are
also presented. (U, Mo)(Al, Si)3 with a
concentration of approximately 55 at% of Si, is proposed
to be the only component of the interaction layer. The
zone, surrounding the interaction layer, where Si
precipitates are dissolved, already reported at 550ºC,
is also very noticeable at 340ºC.
Results for new
temperatures were added to the TTT diagram for
g U-7wt%Mo. The influence of
Pt as g-stabilizer is also
shown.
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Contact: Dr. Jordi Roglans-Ribas
Technical Director, RERTR Department
Nuclear Engineering Division – 362
Argonne National Laboratory
9700 South Cass Avenue
Argonne, IL 60439
Fax: +1 630-252-5161
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